| US 7,525,838 B2 | ||
| Flash memory device and method for programming multi-level cells in the same | ||
| Kee-Ho Jung, Suwon-si (Korea, Republic of); Jae-Yong Jeong, Yongin-si (Korea, Republic of); and Chi-Weon Yoon, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 21, 2006, as Appl. No. 11/642,925. | ||
| Claims priority of application No. 10-2006-0082982 (KR), filed on Aug. 30, 2006. | ||
| Prior Publication US 2008/0056006 A1, Mar. 06, 2008 | ||
| Int. Cl. G11C 11/34 (2006.01) | ||
| U.S. Cl. 365—185.03 [365/185.24; 365/185.18; 365/185.22; 365/185.28; 365/185.33] | 21 Claims |
| 1. A method for programming a flash memory device comprising a plurality of memory cells, wherein a threshold voltage of each
of the memory cells is programmable in any one of a plurality of data states, said method comprising:
programming selected memory cells in a first data state, the first data state having a corresponding first threshold voltage;
verifying a result of the programming;
successively programming selected memory cells in at least two data states corresponding to threshold voltages which are lower
than the first threshold voltage; and
verifying results of the successive programming.
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