| US 7,525,615 B2 | ||
| Integral-type liquid crystal panel with image sensor function and pixel electrode overlapping photoelectric conversion element | ||
| Hongyong Zhang, Atsugi (Japan); Masayuki Sakakura, Atsugi (Japan); and Hideaki Kuwabara, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Sep. 04, 2007, as Appl. No. 11/896,511. | ||
| Application 11/896511 is a division of application No. 11/417202, filed on May 04, 2006, granted, now 7,265,811. | ||
| Application 11/417202 is a division of application No. 11/074020, filed on Mar. 08, 2005, granted, now 7,042,548. | ||
| Application 11/074020 is a division of application No. 10/245744, filed on Sep. 18, 2002, granted, now 6,864,950. | ||
| Application 10/245744 is a division of application No. 09/750063, filed on Dec. 29, 2000, granted, now 6,462,806. | ||
| Application 09/750063 is a division of application No. 09/174468, filed on Oct. 19, 1998, granted, now 6,243,155. | ||
| Claims priority of application No. 9-306517 (JP), filed on Oct. 20, 1997. | ||
| Prior Publication US 2008/0006828 A1, Jan. 10, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G02F 1/13 (2006.01) | ||
| U.S. Cl. 349—116 [345/173; 345/175; 257/57; 250/208.1; 349/199] | 15 Claims |
| 1. An active matrix display device comprising:
a first thin film transistor and a second thin film transistor formed over a substrate;
a first interlayer insulating film formed over the first thin film transistor;
a first wiring line formed over the first interlayer insulating film wherein the first wiring line is electrically connected
to the first thin film transistor through a first contact hole of the first interlayer insulating film;
a second wiring line formed over the first interlayer insulating film wherein the second wiring line is electrically connected
to the second thin film transistor through a second contact hole of the first interlayer insulating film;
a photoelectric conversion element formed over the first interlayer insulating film and electrically connected to the second
wiring line wherein the photoelectric conversion element comprises a photoelectric conversion layer formed over the second
wiring line and an electrode formed on the photoelectric conversion layer;
a second interlayer insulating film formed over the photoelectric conversion element and the first wiring line; and
a pixel electrode formed over the second interlayer insulating film and electrically connected to the first wiring line through
a contact hole of the second interlayer insulating film,
wherein the pixel electrode overlaps the photoelectric conversion element.
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