| US 7,525,166 B2 | ||
| Memory element and memory | ||
| Masanori Hosomi, Kanagawa (Japan); Hiroyuki Ohmori, Kanagawa (Japan); Tetsuya Yamamoto, Kanagawa (Japan); Yutaka Higo, Miyagi (Japan); Kazutaka Yamane, Miyagi (Japan); Yuki Oishi, Kanagawa (Japan); and Hiroshi Kano, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Apr. 17, 2007, as Appl. No. 11/736,360. | ||
| Claims priority of application No. 2006-113538 (JP), filed on Apr. 17, 2006. | ||
| Prior Publication US 2007/0242502 A1, Oct. 18, 2007 | ||
| Int. Cl. H01L 29/82 (2006.01) | ||
| U.S. Cl. 257—421 [257/295; 257/E27.006; 365/158] | 7 Claims |
| 1. A memory element comprising:
a memory layer that retains information based on a magnetization state of a magnetic material, wherein
a magnetization pinned layer is provided for the memory layer through an intermediate layer,
the intermediate layer is formed of an insulator,
spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so
that information is recorded in the memory layer, and
a fine oxide is dispersed in an entire or part of a ferromagnetic layer forming the memory layer, wherein
the ferromagnetic layer forming the memory layer has a coercive force of 200 Oe or more.
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