US 7,525,130 B2
	Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same
Umesh K. Mishra, Montecito, Calif. (US); Huili Xing, South Bend, Ind. (US); Debdeep Jena, South Bend, Ind. (US); and Siddharth Rajan, Goleta, Calif. (US)
Assigned to The Regents of the University of California, Oakland, Calif. (US)
Filed on Sep. 29, 2005, as Appl. No. 11/241,804.
Claims priority of provisional application 60/614585, filed on Sep. 29, 2004.
Prior Publication US 2006/0231860 A1, Oct. 19, 2006
Int. Cl. H01L 31/00 (2006.01)

U.S. Cl. 257—183  [257/192; 257/E29.249]

28 Claims

1. A III-V Nitride-based field effect transistor (FET) comprising a polarization doped channel underlying source, gate and drain contacts, wherein the channel comprises a first Nitride based alloy compositionally graded to a second Nitride based alloy over a grading distance to induce a continuous 3-dimensional electronic charge distribution in the channel.