| US 7,525,127 B2 | ||
| Semiconductor light emitting device | ||
| Yasushi Hattori, Kawasaki (Japan); Shinji Saito, Yokohama (Japan); Shinya Nunoue, Ichikawa (Japan); Masahiro Yamamoto, Kawasaki (Japan); Naomi Shida, Minato-ku (Japan); Kei Kaneko, Odawara (Japan); and Genichi Hatakoshi, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Nov. 28, 2005, as Appl. No. 11/287,236. | ||
| Claims priority of application No. 2005-182403 (JP), filed on Jun. 22, 2005. | ||
| Prior Publication US 2006/0291246 A1, Dec. 28, 2006 | ||
| Int. Cl. H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—99 [257/100; 257/E33.059] | 17 Claims |
| 1. A semiconductor light emitting device comprising:
a substrate;
a semiconductor light emitting element provided on the substrate and emitting light beams in ultraviolet ranges and visible
ranges only in a light emitting direction of the semiconductor light emitting element, the light emitting direction being
parallel to a surface of the substrate and the semiconductor light emitting element being a laser diode; and
a fluorescent element provided on the substrate, absorbing the light beams emitted from the semiconductor light emitting element,
and outputting visible light beams in a light taking-out direction which is different from the light emitting direction; and
a light shield which is provided above the semiconductor light emitting element, covers a space between the semiconductor
light emitting element and the fluorescent element, and is configured to prevent leakage of the light beams emitted from the
semiconductor light emitting element, the light shield having a reflecting power so as to reduce an amount of the light beams
emitted from the semiconductor light emitting element passing through the light shield,
wherein most of the light beams emitted from the light emitting element are absorbed in the fluorescent element so as to prevent
the light beams from being emitted in the light taking-out direction.
|