US 7,525,118 B2
Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device
Osamu Nakamura, Kanagawa (Japan); and Mai Akiba, Kanagawa (Japan)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan)
Filed on Aug. 19, 2004, as Appl. No. 10/921,143.
Application 10/921143 is a division of application No. 10/218035, filed on Aug. 14, 2002, granted, now 6,887,724.
Claims priority of application No. 2001-254685 (JP), filed on Aug. 24, 2001.
Prior Publication US 2005/0017239 A1, Jan. 27, 2005
Int. Cl. H01L 29/06 (2006.01)
U.S. Cl. 257—48  [257/213; 257/288; 257/E29.027] 18 Claims
OG exemplary drawing
 
1. A test element group comprising a plurality of testing elements, each of the plurality of testing elements comprising:
a semiconductor film comprising a first semiconductor region, two impurity regions, and a channel region provided between the two impurity regions, wherein one of the two impurity regions is provided between the first semiconductor region and the channel region;
a first insulating layer provided on the first semiconductor region;
a second insulating layer provided on the channel region, wherein the first insulating layer and the second insulating layer are formed from a common film;
a first pad for attaching a first measurement probe thereto;
a second pad for attaching a second measurement probe thereto;
a third pad for attaching a third measurement probe thereto;
a first electrode electrically connected to the first pad and provided on the second insulating layer;
a second electrode electrically connected to the second pad and provided on one of the two impurity regions; and
a third electrode electrically connected to the third pad and provided in contact with the other one of the two impurity regions,
wherein the second electrode and the third electrode are provided in a same layer as the first electrode, and
wherein the second electrode is provided on the first insulating layer.