| US 7,525,107 B2 | ||
| Apparatus and method for forming an alignment layer | ||
| Johji Nakagaki, Yasu (Japan); Akihiro Asahara, Sagamihara (Japan); Hideo Kimura, Shiga (Japan); Hiroaki Kitahara, Otsu (Japan); Tatsuya Nishiwaki, Yasu (Japan); Yasuhiko Shiota, Otsu (Japan); and Takeshi Yamada, Kusatsu (Japan) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Dec. 05, 2006, as Appl. No. 11/566,716. | ||
| Claims priority of application No. 2005-358324 (JP), filed on Dec. 12, 2005. | ||
| Prior Publication US 2008/0011969 A1, Jan. 17, 2008 | ||
| Int. Cl. G21G 5/00 (2006.01) | ||
| U.S. Cl. 250—492.21 | 3 Claims |
| 1. An method for forming a liquid crystal alignment layer in a thin-film on a substrate, comprising:
a step for preparing a substrate whereon a thin-film is formed that will be a liquid-crystal alignment layer;
a step for placing mask, having a reflective face on the substrate side, between the substrate and an ion source; and
a step for conveying the substrate, irradiating the thin-film on the substrate with an ion beam emitted from the ion source,
and reflecting the ion beam between the thin-film and the reflective face of the mask, reflecting the ion beam in the orientation
direction from the reflective face of the mask;
wherein:
the traveling direction of the substrate, in which the substrate is conveyed, is the same direction as the direction in which
the ion beam is illuminated.
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