| US 7,524,776 B2 | ||
| Surface-activation of semiconductor nanostructures for biological applications | ||
| Nader M. Kalkhoran, Tewksbury, Mass. (US); James G. Moe, Sudbury, Mass. (US); Kurt J. Linden, Wayland, Mass. (US); and Marisa Sambito, Bedford, Mass. (US) | ||
| Assigned to Spire Corporation, Bedford, Mass. (US) | ||
| Filed on Nov. 30, 2004, as Appl. No. 11/2,851. | ||
| Prior Publication US 2006/0116002 A1, Jun. 01, 2006 | ||
| Int. Cl. H01L 21/3065 (2006.01) | ||
| U.S. Cl. 438—798 [257/E21.218; 257/E21.311; 257/E21.334; 257/E29.071; 977/773; 977/774; 977/888] | 17 Claims |
| 1. A method of producing semiconductor nanostructures comprising:
depositing a release layer on a semiconductor substrate;
forming a heterostructure over the release layer, the heterostructure providing confinement of charge carriers therein;
applying a mask to a surface of the heterostructure such that a portion of the surface of the heterostructures is rendered
resistant to etching;
removing a portion of the heterostructure to form a plurality of separate heterostructure elements disposed on a remaining
portion of the release layer;
activating at least a portion of a surface of the heterostructure elements by treating said portion with ions so as to deliver
a dose of ions in a range of about 1012 to 1017 ions/cm2; and
dissolving the release layer whereby semiconductor nanostructures having activated surfaces are formed.
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