| US 7,524,769 B2 | ||
| Method and system for removing an oxide from a substrate | ||
| Anthony Dip, Cedar Creek, Tex. (US); Allen John Leith, Austin, Tex. (US); and Seungho Oh, Austin, Tex. (US) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan) | ||
| Filed on Mar. 31, 2005, as Appl. No. 11/94,462. | ||
| Prior Publication US 2006/0228900 A1, Oct. 12, 2006 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—711 [438/700; 438/707; 438/710; 257/E21.226] | 24 Claims |
| 1. A method for processing a substrate, comprising:
providing the substrate in a process chamber, the substrate containing an oxide layer formed thereon;
exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber;
exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about
900° C. to remove the oxide layer from the substrate;
maintaining the substrate at a second substrate temperature different than the first substrate temperature, wherein said first
substrate temperature is less than said second substrate temperature; and
forming a silicon-containing film on the substrate by exposing the substrate to a silicon containing gas comprising Si2Cl6 while the substrate is at the second substrate temperature.
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