| US 7,524,762 B2 | ||
| Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA | ||
| Christophe Marcadal, Sunnyvale, Calif. (US); Rongjun Wang, Sunnyvale, Calif. (US); Hua Chung, San Jose, Calif. (US); and Nirmalya Maity, Acton, Mass. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jul. 03, 2007, as Appl. No. 11/773,302. | ||
| Application 11/773302 is a continuation of application No. 11/061039, filed on Feb. 19, 2005, granted, now 7,241,686. | ||
| Claims priority of provisional application 60/590216, filed on Jul. 21, 2004. | ||
| Claims priority of provisional application 60/589402, filed on Jul. 20, 2004. | ||
| Prior Publication US 2008/0032041 A1, Feb. 07, 2008 | ||
| Int. Cl. H01L 21/44 (2006.01); H01L 21/07 (2006.01) | ||
| U.S. Cl. 438—656 [438/683; 438/685; 257/E21.17] | 26 Claims |
| 1. A method for forming a tantalum-containing material on a substrate, comprising:
heating a liquid tantalum precursor comprising TAIMATA to a temperature of at least 30° C. to form a tantalum precursor gas;
exposing a substrate to a continuous flow of a carrier gas during an atomic layer deposition process;
exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the continuous flow of the
carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon; and
exposing the tantalum precursor layer to at least one secondary element-containing gas by pulsing the at least one secondary
element-containing gas into the continuous flow of the carrier gas while forming a tantalum barrier layer on the substrate.
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