| US 7,524,753 B2 | ||
| Semiconductor device having through electrode and method of manufacturing the same | ||
| Masahiro Sunohara, Nagano (Japan); Mitsutoshi Higashi, Nagano (Japan); Akinori Shiraishi, Nagano (Japan); and Hideaki Sakaguchi, Nagano (Japan) | ||
| Assigned to Shinko Electric Industries Co., Ltd., Nagano-shi (Japan) | ||
| Filed on Jun. 15, 2006, as Appl. No. 11/424,385. | ||
| Claims priority of application No. 2005-178534 (JP), filed on Jun. 17, 2005. | ||
| Prior Publication US 2006/0286789 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 21/44 (2006.01); H01L 29/40 (2006.01) | ||
| U.S. Cl. 438—598 [257/621; 257/E23.001; 257/E23.141; 257/E23.145] | 12 Claims |
| 1. A method of manufacturing a semiconductor device having a through electrode, comprising the steps of:
forming a through hole in a substrate;
forming a first metal layer on one surface of the substrate and providing an insulating protection film on the first metal
layer;
forming the through electrode by filling the through hole with a second metal, wherein the electrode forming step comprises
the steps of electroplating the second metal, which is applied from the other surface of the substrate, while using the first
metal layer as a power feeding layer;
removing the insulating protection film; and
removing the first metal layer located in an area other than a peripheral portion of the through electrode.
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