| US 7,524,750 B2 | ||
| Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD | ||
| Srinivas D. Nemani, Sunnyvale, Calif. (US); Young S. Lee, San Jose, Calif. (US); Ellie Y. Yieh, San Jose, Calif. (US); Anchuan Wang, Sunnyvale, Calif. (US); Jason Thomas Bloking, Mountain View, Calif. (US); and Lung-Tien Han, San Jose, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Oct. 27, 2006, as Appl. No. 11/553,772. | ||
| Claims priority of provisional application 60/792743, filed on Apr. 17, 2006. | ||
| Prior Publication US 2007/0243693 A1, Oct. 18, 2007 | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—597 [438/624; 438/694; 438/758; 257/E21.276; 257/E21.279; 257/E21.291; 257/E21.546; 257/E21.576] | 21 Claims |
| 1. A method for filling a pre-metal deposition trench formed on a substrate, comprising:
executing a cycle including:
depositing a layer on the substrate in a high density CVD chamber, the substrate cooled to less than 400° C., and
etching a portion of the deposited layer on the substrate in the chamber; and
repeating the cycle of depositing the layer and etching the portion of the layer for a predetermined number of cycles.
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