US 7,524,739 B2
Method of improving a surface of a semiconductor substrate
Wen Lin, Emmaus, Pa. (US)
Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France)
Filed on Feb. 22, 2007, as Appl. No. 11/677,871.
Claims priority of application No. 06291827 (EP), filed on Nov. 27, 2006.
Prior Publication US 2008/0124899 A1, May 29, 2008
Int. Cl. H01L 21/20 (2006.01); H01L 21/36 (2006.01)
U.S. Cl. 438—479  [438/478; 438/481; 438/482; 257/E21.001; 257/E21.598] 19 Claims
OG exemplary drawing
 
1. A method of improving a silicon on insulator semiconductor substrate that has a surface layer that at least partially includes silicon and includes defects, which comprises depositing silicon by selective epitaxial growth (SEG) in at least one hole in the surface of the semiconductor substrate to improve surface quality, wherein the silicon is grown selectively on monocrystalline material silicon but not on polycrystalline or amorphous material to repair the defects in the surface layer.