| US 7,524,736 B2 | ||
| Process for manufacturing wafers usable in the semiconductor industry | ||
| Giampiero Ottaviani, Modena (Italy); Federico Corni, Modena (Italy); Paolo Ferrari, Gallarate (Italy); and Flavio Francesco Villa, Milan (Italy) | ||
| Assigned to STMicroelectronics S.r.l., Agrate Brianza (Italy) | ||
| Filed on Dec. 01, 2006, as Appl. No. 11/607,802. | ||
| Claims priority of application No. 05425885 (EP), filed on Dec. 14, 2005. | ||
| Prior Publication US 2007/0155183 A1, Jul. 05, 2007 | ||
| Int. Cl. H01L 21/30 (2006.01); C03C 15/00 (2006.01) | ||
| U.S. Cl. 438—455 [438/458; 216/35] | 30 Claims |
| 1. A process for manufacturing a layer of semiconductor material, comprising, in sequence:
providing a first wafer of semiconductor material having a first face and a second face;
forming a defect layer in said first wafer at a distance from said first face;
bonding said first face of said first wafer to a second wafer; and
introducing atomic hydrogen into said first wafer through said second face at an energy such as to avoid defects to be generated
in said first wafer and at a temperature lower than 600° C., causing the separation of said first wafer into a usable layer
bonded to said second wafer and a remaining layer comprised between said defect layer and said second face.
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