| US 7,524,717 B2 | ||
| CMOS image sensor providing uniform pixel exposure and method of fabricating same | ||
| Young-Hoon Park, Suwon-si (Korea, Republic of); and Tae-Seok Oh, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Jan. 11, 2008, as Appl. No. 11/972,773. | ||
| Application 11/972773 is a division of application No. 11/274855, filed on Nov. 16, 2005, granted, now 7,342,271. | ||
| Claims priority of application No. 2004-94704 (KR), filed on Nov. 18, 2004. | ||
| Prior Publication US 2008/0108166 A1, May 08, 2008 | ||
| Int. Cl. H01L 21/336 (2006.01); H01L 21/8234 (2006.01) | ||
| U.S. Cl. 438—197 [438/199; 257/292] | 3 Claims |
| 1. A method of fabricating a complementary metal oxide semiconductor (CMOS) image sensor, the method comprising:
forming field isolation film patterns defining active regions in a semiconductor substrate;
forming a storage diffusion region in one of the active regions;
forming a first transfer gate, a second transfer gate, a read gate, and a reset gate on the semiconductor substrate;
forming an upper capacitor electrode over the storage diffusion region;
forming a photodiode region in an active region of the semiconductor substrate between the first and second transfer gates;
forming a read diffusion region, a floating diffusion region, and a reset diffusion region in the semiconductor substrate
using a mask covering the photodiode region and the storage diffusion region; and,
forming connection lines respectively contacting the first transfer gate, the second transfer gate, the read gate, the reset
gate, the read diffusion region, the floating diffusion region, and the reset diffusion region;
wherein the connection line contacting the read diffusion region is connected to the connection line contacting the floating
diffusion region.
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