| US 7,524,708 B2 | ||
| Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate | ||
| Joon-Suk Song, Gyeonggi-do (Korea, Republic of); Soo-Hyung Seo, Gyeonggi-do (Korea, Republic of); and Myung-Hwan Oh, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to NeosemiTech Corporation, Seoul (Korea, Republic of) | ||
| Filed on Feb. 22, 2006, as Appl. No. 11/359,798. | ||
| Claims priority of application No. 10-2005-0016770 (KR), filed on Feb. 28, 2005; and application No. 10-2005-0116268 (KR), filed on Dec. 01, 2005. | ||
| Prior Publication US 2006/0192212 A1, Aug. 31, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 29/04 (2006.01) | ||
| U.S. Cl. 438—150 [438/973; 257/628] | 5 Claims |
| 1. A fabrication method of a light emitting diode comprising steps of:
preparing a (100) substrate tilted toward a first direction and a second direction simultaneously;
forming a first cladding layer with a semiconductor material of a first conducive type on the (100) substrate;
forming an active layer on the first cladding layer; and
forming a second cladding layer with a semiconductor material of a second conducive type on the active layer,
wherein the first direction and the second direction are a [0-1-1] direction and a [0-11] direction, respectively;
wherein the (100) substrate is a III-V or a IV-IV group semiconductor substrate;
wherein the (100) substrate is a (100) III-V group semiconductor substrate; and
wherein the (100) substrate has a crystal orientation such that a (100) plane is inclined 2 to 20° toward the [0-1-1] direction and 1 to 8 ° toward the [0-11] direction.
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