| US 7,524,686 B2 | ||
| Method of making light emitting diodes (LEDs) with improved light extraction by roughening | ||
| Chen-Fu Chu, Hsinchu (Taiwan); Hao-Chun Cheng, Donggang Township, Pingtung County (Taiwan); Feng-Hsu Fan, Jhonghe (Taiwan); Wen-Huang Liu, Bei-Shan Village (Taiwan); and Chao-Chen Cheng, Hsinchu (Taiwan) | ||
| Assigned to Semileds Corporation, Boise, Id. (US) | ||
| Filed on Mar. 23, 2007, as Appl. No. 11/690,443. | ||
| Application 11/690443 is a continuation in part of application No. 11/618468, filed on Dec. 29, 2006. | ||
| Application 11/618468 is a continuation in part of application No. 11/032880, filed on Jan. 11, 2005, granted, now 7,186,580, filed on Mar. 06, 2007. | ||
| Prior Publication US 2007/0190676 A1, Aug. 16, 2007 | ||
| Int. Cl. H01L 21/66 (2006.01) | ||
| U.S. Cl. 438—22 [438/29; 438/48; 438/E21.125] | 19 Claims |
| 1. A method comprising:
providing a light-emitting diode (LED) wafer assembly having a plurality of LED stacks disposed above a conductive substrate,
each of the LED stacks comprising:
a p-doped layer disposed above the conductive substrate;
an active layer for emitting light disposed above the p-doped layer; and
an n-doped layer disposed above the active layer;
applying a protective layer covering a selected portion of a surface of the n-doped layer for each of the plurality of LED
stacks;
altering the surface of the n-doped layer by at least one of roughening and texturing, wherein the protective layer shields
the selected portion of each of the plurality of LED stacks during the altering;
removing the protective layer; and
forming an n-electrode above the selected portion after removing the protective layer.
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