| US 7,524,593 B2 | ||
| Exposure mask | ||
| Hideto Ohnuma, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Aug. 07, 2006, as Appl. No. 11/462,824. | ||
| Claims priority of application No. 2005-234906 (JP), filed on Aug. 12, 2005. | ||
| Prior Publication US 2007/0037069 A1, Feb. 15, 2007 | ||
| Int. Cl. G03F 1/00 (2006.01); G03C 5/00 (2006.01) | ||
| U.S. Cl. 430—5 [430/311] | 13 Claims |
| 1. An exposure mask wherein a phase difference Δθ of i-line (365 nm) which transmits through a transparent region and a semi-transparent
region and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 1
Δθ≤arccos(−√n/2). [Formula 1]
|