| US 7,524,451 B2 | ||
| Method of manufacturing an insulating target material | ||
| Koji Ohashi, Chino (Japan); Setsuya Iwashita, Nirasaki (Japan); Takeshi Kijima, Matsumoto (Japan); and Yasuaki Hamada, Suwa (Japan) | ||
| Assigned to Seiko Epson Corporation, (Japan) | ||
| Filed on Aug. 15, 2006, as Appl. No. 11/504,255. | ||
| Claims priority of application No. 2005-235809 (JP), filed on Aug. 16, 2005. | ||
| Prior Publication US 2007/0040243 A1, Feb. 22, 2007 | ||
| Int. Cl. B28B 1/00 (2006.01) | ||
| U.S. Cl. 264—658 [264/653; 264/654] | 5 Claims |
| 1. A method of manufacturing an insulating target material for obtaining a conductive complex oxide film represented by a
general formula ABO3, the method comprising:
mixing an oxide of an element A and an oxide of an element B, heat-treating the resulting mixed powder, and pulverizing the
resulting product to obtain a first powder;
mixing the first powder and a solution including at least one of an Si raw material and a Ge raw material, and collecting
the resulting powder to obtain a second powder;
heat-treating the second powder and pulverizing the resulting product to obtain a third powder; and
heat-treating the third powder.
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