| US 7,524,406 B2 | ||
| Processing apparatus including a reactor for electrochemically etching microelectronic workpiece | ||
| Daniel Woodruff, Kalispell, Mont. (US); Steve Eudy, Kalispell, Mont. (US); James Erickson, Columbia Falls, Mont. (US); Thomas Oberlitner, Kalispell, Mont. (US); and Matthew Egloff, Kalispell, Mont. (US) | ||
| Assigned to Semitool, Inc., Kalispell, Mont. (US) | ||
| Filed on Dec. 23, 2003, as Appl. No. 10/745,190. | ||
| Application 10/745190 is a division of application No. 09/782216, filed on Feb. 13, 2001, granted, now 6,773,559. | ||
| Application 09/782216 is a continuation in part of application No. 09/476526, filed on Jan. 03, 2000, granted, now 6,547,937. | ||
| Prior Publication US 2004/0134774 A1, Jul. 15, 2004 | ||
| Int. Cl. C25D 17/00 (2006.01); C25D 21/12 (2006.01) | ||
| U.S. Cl. 204—224M [204/224 R; 204/230.2] | 15 Claims |

| 1. A reactor for electrochemically processing a microelectronic workpiece, the reactor comprising:
a reactor head assembly including a workpiece contact for providing electrochemical processing power to a surface of a workpiece
held by the reactor head assembly, the reactor head assembly being movable between a workpiece loading/unloading position
and a workpiece processing position;
a reactor base assembly including a movable electrode assembly having an electrode surface that is movable along a plane that
is generally parallel to the surface of a workpiece held by the reactor head assembly when the reactor head assembly is in
the workpiece processing position; and
a gap adjustment assembly disposed on the reactor base assembly to mechanically adjust the spacing that is present between
the electrode surface and the surface of the microelectronic workpiece, including a central region of the workpiece surface,
during processing thereof.
|