| US 7,524,347 B2 | ||
| CMP composition comprising surfactant | ||
| Tao Sun, Naperville, Ill. (US); and Robert Medsker, Yorkville, Ill. (US) | ||
| Assigned to Cabot Microelectronics Corporation, Aurora, Ill. (US) | ||
| Filed on Oct. 28, 2004, as Appl. No. 10/975,585. | ||
| Prior Publication US 2006/0096496 A1, May 11, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C09G 1/02 (2006.01); C09G 1/04 (2006.01); B24B 1/00 (2006.01) | ||
| U.S. Cl. 51—307 [51/308; 51/309; 106/3; 438/691; 438/692; 438/693] | 26 Claims |
| 1. A polishing composition comprising:
(a) about 0.2 to about 1 wt. % of fumed alumina,
(b) about 0.1 to about 1 wt. % of alpha alumina,
(c) about 0.1 to about 4 wt. % of silica, wherein the silica is colloidal silica,
(d) about 10 to about 1000 ppm of a nonionic surfactant,
(e) a metal chelating organic acid,
(f) an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, peroxysulfuric acid,
peroxyacetic acid, perboric acid, salts thereof, and combinations thereof, and
(g) a liquid carrier.
|