| US 7,523,550 B2 | ||
| Process to open connection vias on a planarized surface | ||
| Amanda Baer, Campbell, Calif. (US); Hamid Balamane, Palo Alto, Calif. (US); Michael Feldbaum, San Jose, Calif. (US); Ming Jiang, San Jose, Calif. (US); and Aron Pentek, San Jose, Calif. (US) | ||
| Assigned to Hitachi Global Storage Technologies Netherlands B.V., Amsterdam (Netherlands) | ||
| Filed on Apr. 25, 2006, as Appl. No. 11/411,555. | ||
| Prior Publication US 2007/0245557 A1, Oct. 25, 2007 | ||
| Int. Cl. H01K 3/10 (2006.01) | ||
| U.S. Cl. 29—852 [29/603.07; 29/837; 29/845; 29/854; 205/119; 205/122; 360/121; 360/122; 360/317; 427/127; 427/128] | 8 Claims |
| 1. A method for forming a via in a structure, comprising:
providing a substrate;
depositing an electrically insulating layer;
forming a first mask structure over the electrically insulating layer, the first mask structure having an opening configured
to define a via;
performing a reactive ion mill to remove portions of the electrically insulating layer that are not protected by the mask;
and
depositing an electrically conductive material, into the via wherein the depositing the electrically conductive material comprises
sputter depositing an electrically conductive seed layer, forming a second mask structure having an opening at the via, electroplating
the electrically conductive material into the via, removing the second mask structure, and removing the remaining portion
of the seed layer outside of the via.
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