| US 7,523,438 B2 | ||
| Method for improved lithographic patterning utilizing optimized illumination conditions and high transmission attenuated PSM | ||
| Michael Hsu, Taipei (Taiwan); Stephen Hsu, Fremont, Calif. (US); Thomas Laidig, Point Richmond, Calif. (US); Douglas Van Den Broeke, Sunnyvale, Calif. (US); and Jang Fung Chen, Cupertino, Calif. (US) | ||
| Assigned to ASML Masktools B.V., Ah Veldhoven (Netherlands) | ||
| Filed on Apr. 19, 2005, as Appl. No. 11/108,665. | ||
| Application 11/108665 is a division of application No. 10/222972, filed on Aug. 19, 2002, granted, now 6,951,701. | ||
| Claims priority of provisional application 60/313487, filed on Aug. 21, 2001. | ||
| Prior Publication US 2005/0186491 A1, Aug. 25, 2005 | ||
| Int. Cl. G06F 17/50 (2006.01); G03F 1/00 (2006.01) | ||
| U.S. Cl. 716—21 [716/19; 430/5] | 10 Claims |
| 1. A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded
on the recording medium for directing the computer to perform a method for optically transferring a lithographic pattern corresponding
to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of
an optical exposure tool, the method comprising the steps of:
generating a diffraction pattern corresponding to said lithographic pattern, said diffraction pattern indicating a plurality
of spatial frequency components corresponding to said lithographic pattern;
determining which of said spatial frequency components need to be captured by a lens in said optical exposure tool in order
to accurately reproduce said lithographic pattern;
determining a set of illumination conditions required for said optical exposure tool to capture said spatial frequency components
necessary for accurately reproducing said lithographic pattern; and
illuminating said high transmission attenuated phase-shift mask with said set of said illumination conditions.
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