| US 7,522,791 B2 | ||
| Method for fabricating polarization reversal structure and reversal structure | ||
| Shoichiro Yamaguchi, Ichinomiya (Japan); Yuichi Iwata, Nagoya (Japan); and Kengo Suzuki, Nagoya (Japan) | ||
| Assigned to NGK Insulators, Ltd., Nagoya (Japan); and NGK Optoceramics Co., Ltd., Komaki (Japan) | ||
| Filed on Mar. 01, 2007, as Appl. No. 11/713,238. | ||
| Application 11/713238 is a continuation of application No. PCT/JP2005/018993, filed on Oct. 11, 2005. | ||
| Claims priority of application No. 2004-299563 (JP), filed on Oct. 14, 2004. | ||
| Prior Publication US 2007/0258131 A1, Nov. 08, 2007 | ||
| Int. Cl. G02B 6/26 (2006.01); G02B 6/10 (2006.01); G02F 1/35 (2006.01) | ||
| U.S. Cl. 385—40 [385/129; 359/326; 359/328] | 4 Claims |
| 1. A method of producing a polarization domain inversion structure comprising polarization domain inversion parts by electric
field poling method using a comb electrode provided on a surface of a substrate comprising a ferroelectric single crystal
and of a single domain, said comb electrode comprising a plurality of electrode portions and a feeding portion,
wherein each of said electrode portions corresponds with each of said domain inversion parts, and wherein said electrode portion
comprises a plurality of low resistance pieces arranged in a direction intersecting the longitudinal direction of said electrode
portion and spaced apart with each other.
|