| US 7,521,952 B2 | ||
| Test structure for electromigration analysis and related method | ||
| Kaushik Chanda, Fishkill, N.Y. (US); Ronald G. Filippi, Wappingers Falls, N.Y. (US); and Ping-Chuan Wang, Hopewell Junction, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jul. 30, 2007, as Appl. No. 11/830,368. | ||
| Prior Publication US 2009/0033351 A1, Feb. 05, 2009 | ||
| Int. Cl. G01R 31/26 (2006.01); G01R 19/00 (2006.01); H01L 23/58 (2006.01) | ||
| U.S. Cl. 324—765 [324/715; 324/158.1; 438/17; 257/48] | 2 Claims |
| 1. A method for electromigration stress testing, the method comprising:
providing an array of a plurality of multilink test sets, each multilink test set including a plurality of metal lines positioned
within a dielectric material and connected in a serial configuration, each multilink test set being connected in a parallel
configuration with the other multilink test sets, the parallel configuration including a first electrical connection to a
cathode end of a first metal line in each multilink test set and a second electrical connection to an anode end of a last
metal line in each multilink test set,
wherein the providing further includes providing the array with N number of metal lines wired in the serial configuration
in each multilink test set and M number of the multilink test sets connected in the parallel configuration;
stressing the metal lines and assuming a failure when a single metal line fails;
converting cumulative distribution function (CDF) values of each array to a corresponding CDF value of a single metal line;
and
fitting the CDF values and failure times of the array to a failure distribution to determine the statistical parameters of
a single metal line, wherein a failure distribution is a lognormal failure distribution.
|