| US 7,521,772 B2 | ||
| Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods | ||
| Thomas N Adam, Poughkeepsie, N.Y. (US); and Thomas A. Wallner, Pleasant Valley, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Nov. 08, 2006, as Appl. No. 11/557,692. | ||
| Prior Publication US 2008/0121930 A1, May 29, 2008 | ||
| Int. Cl. H01L 29/00 (2006.01) | ||
| U.S. Cl. 257—517 [257/197; 257/526; 257/565; 257/E29.044] | 5 Claims |
| 1. A heterostructure bipolar transistor (HBT) comprising:
a substrate;
a monocrystalline emitter atop the substrate;
a collector in the substrate;
at least one isolation region adjacent to the collector;
a monocrystalline silicon germanium (SiGe) intrinsic base extending over each isolation region, the monocrystalline SiGe intrinsic
base directly contacting an upper surface of the at least one isolation region; and
a monocrystalline silicon extrinsic base.
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