| US 7,521,743 B2 | ||
| Nonvolatile magnetic memory device and photomask | ||
| Hajime Yamagishi, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Jun. 08, 2005, as Appl. No. 11/148,397. | ||
| Claims priority of application No. P2004-172122 (JP), filed on Jun. 10, 2004. | ||
| Prior Publication US 2005/0276090 A1, Dec. 15, 2005 | ||
| Int. Cl. H01L 31/113 (2006.01) | ||
| U.S. Cl. 257—295 [257/298; 257/421; 257/E21.662; 257/E21.663; 365/158; 365/65; 365/97; 365/171; 365/173] | 5 Claims |
| 1. A nonvolatile magnetic memory device comprising;
a magnetoresistance device having a recording layer formed of a ferromagnetic material for storing information by use of variation
in resistance depending on the magnetization inversion state;
wherein,
a plan-view shape of said recording layer is a pseudo-rhombic shape,
two of the four sides constituting said pseudo-rhombic shape each include a smooth curve having a central portion curved toward
the center of said pseudo-rhombic shape,
the easy axis of magnetization of said recording layer is substantially parallel to the longer axis of said pseudo-rhombic
shape,
the hard axis of magnetization of said recording layer is substantially parallel to the shorter axis of said pseudo-rhombic
shape,
the sides constituting the plan-view shape of said recording layer are smoothly connected to each other, and
the plan-view shape of said recording layer is substantially line symmetric with respect to the shorter axis of the pseudo-rhombic
shape, but not with respect to the longer axis of said pseudo-rhombic shape.
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