| US 7,521,383 B2 | ||
| Manufacturing method of semiconductor device | ||
| Masafumi Morisue, Sagamihara (Japan); Ryosuke Watanabe, Kanagawa (Japan); Junya Maruyama, Kanagawa (Japan); and Daiki Yamada, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Jun. 21, 2006, as Appl. No. 11/425,559. | ||
| Claims priority of application No. 2005-192520 (JP), filed on Jun. 30, 2005. | ||
| Prior Publication US 2007/0004233 A1, Jan. 04, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—799 [438/940; 438/458; 257/E21.328; 257/331; 257/596] | 20 Claims |
| 1. A manufacturing method of a semiconductor device, comprising: forming a metal layer over a substrate having a light transmitting property; forming an insulating layer over the metal layer; forming a layer including a semiconductor element over the insulating layer; applying a resin material over the layer including the semiconductor element; curing the resin material; carrying out irradiation selectively with light from a rear surface side of the substrate to ablate the metal layer in a region selectively irradiated with the light. |