| US 7,521,378 B2 | ||
| Low temperature process for polysilazane oxidation/densification | ||
| Janos Fucsko, Boise, Id. (US); John A Smythe, III, Boise, Id. (US); Li Li, Meridian, Id. (US); and Grady S Waldo, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jul. 01, 2004, as Appl. No. 10/883,191. | ||
| Prior Publication US 2006/0003596 A1, Jan. 05, 2006 | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—781 [438/799; 257/E21.489; 427/96.4; 427/344] | 84 Claims |
| 1. A method of forming a silicon oxide layer in a trench on a substrate, comprising:
wet oxidizing a polysilazane layer situated on the substrate by spraying water onto the polysilazane layer in an ozone ambient
at a temperature of less than about 100° C. to produce the silicon oxide layer.
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