| US 7,521,365 B2 | ||
| Selective epitaxy process with alternating gas supply | ||
| Yihwan Kim, Milpitas, Calif. (US); and Arkadii V. Samoilov, Sunnyvale, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on May 31, 2006, as Appl. No. 11/421,156. | ||
| Application 11/421156 is a division of application No. 11/001774, filed on Dec. 01, 2004, granted, now 7,312,128. | ||
| Prior Publication US 2006/0216876 A1, Sep. 28, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—694 [438/482; 438/714; 438/734; 438/933] | 10 Claims |
| 1. A method for selectively and epitaxially forming a silicon-containing material on a substrate surface, comprising:
positioning a substrate comprising a monocrystalline surface and at least a dielectric surface into a process chamber; and
performing a deposition sequence at least two times, the deposition sequence comprising:
depositing an epitaxial material on the monocrystalline surface while simultaneously depositing a second material on the dielectric
surface, the second material comprising a material selected from the group consisting of a polycrystalline material, an amorphous
material, and combinations thereof; and subsequently
etching the second material, wherein the net result of the deposition sequence consists essentially of the epitaxial material
selectively grown on the monocrystalline surface, wherein the epitaxial material comprises silicon-carbon.
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