| US 7,521,362 B2 | ||
| Methods for the optimization of ion energy control in a plasma processing system | ||
| Kenji Takeshita, Fremont, Calif. (US); Odette Turmel, Fremont, Calif. (US); Felix Kozakevich, Sunnyvale, Calif. (US); and Eric Hudson, Berkeley, Calif. (US) | ||
| Assigned to LAM Research Corporation, Fremont, Calif. (US) | ||
| Filed on Dec. 23, 2003, as Appl. No. 10/745,846. | ||
| Prior Publication US 2006/0121729 A1, Jun. 08, 2006 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—689 [438/710; 438/714; 438/687] | 38 Claims |
| 1. In a plasma processing system, a method for etching a feature through a dielectric layer on a semiconductor substrate,
comprising:
placing said substrate in a plasma processing chamber of said plasma processing system;
flowing an etchant gas mixture into said plasma processing chamber, said etchant gas mixture being configured to etch said
dielectric layer;
striking a plasma from said etchant gas mixture; and
etching said feature through said dielectric layer while applying a bias RF signal to said substrate, said bias RF signal
having a bias RF frequency of between about 34 MHz and about 90 MHz, said bias RF signal further has a bias RF power component
that is configured to cause said feature to be etched in accordance to predefined etch rate parameters and etch profile parameters
at said bias RF frequency.
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