| US 7,521,360 B2 | ||
| Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby | ||
| Patrick A. Halahan, San Mateo, Calif. (US); Sam Kao, San Mateo, Calif. (US); Bosco Lan, Fremont, Calif. (US); Sergey Savastiouk, San Jose, Calif. (US); and Oleg Siniaguine, San Carlos, Calif. (US) | ||
| Assigned to Tru-Si Technologies, Inc., Sunnyvale, Calif. (US) | ||
| Filed on Oct. 10, 2006, as Appl. No. 11/548,053. | ||
| Application 11/548053 is a division of application No. 11/055940, filed on Feb. 10, 2005, abandoned. | ||
| Application 11/055940 is a division of application No. 10/410929, filed on Apr. 09, 2003, granted, now 6,897,148. | ||
| Prior Publication US 2007/0128868 A1, Jun. 07, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—678 [438/667; 438/977; 257/E21.597; 257/E23.011] | 8 Claims |
| 1. A manufacturing method comprising:
forming an opening in a first surface of a body comprising a semiconductor substrate, wherein the opening extends into the
semiconductor substrate;
forming a seed for electroplating a conductor into the opening;
electroplating the conductor into the opening, wherein the electroplating is initiated on the seed at a distance from the
first surface of the body but not over the opening's sidewalls adjacent the first surface of the body, wherein before the
electroplating operation, a through hole is formed in the semiconductor substrate at the location of the opening; and
forming a conductive layer over a second surface of the body;
wherein forming the opening and the through hole comprises:
forming the opening in the first surface of the body such that the opening does not go through the body;
after forming the conductive layer, extending the opening to form the through hole and expose the conductive layer from the
first surface of the body;
wherein the seed electrically contacts the conductive layer in the opening;
wherein the method further comprises coupling the conductive layer to an electrical potential for the electroplating operation,
wherein during the electroplating operation the seed is coupled to the electrical potential through the conductive layer.
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