| US 7,521,346 B2 | ||
| Method of forming HfSiN metal for n-FET applications | ||
| Alessandro C. Callegari, Yorktown Heights, N.Y. (US); Martin M. Frank, New York, N.Y. (US); Rajarao Jammy, Hopewell Junction, N.Y. (US); Dianne L. Lacey, Mahopac, N.Y. (US); Fenton R. McFeely, Ossining, N.Y. (US); and Sufi Zafar, Briarcliff Manor, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Oct. 19, 2007, as Appl. No. 11/875,524. | ||
| Application 11/875524 is a division of application No. 11/035369, filed on Jan. 13, 2005, abandoned. | ||
| Prior Publication US 2008/0038905 A1, Feb. 14, 2008 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—592 [438/591; 438/648; 438/685; 257/411; 257/412] | 1 Claim |
| 1. A method of forming a semiconductor structure comprising:
providing a stack comprising, from top to bottom, a Hf oxide high k dielectric and an interfacial layer on a surface of a
substrate;
forming a HfSiN film on said stack, wherein said HfSiN film is formed by providing a Hf target and an atmosphere that comprises
a mixture of Ar, N2, and a Si source diluted with from about 70 to 99% He and sputtering said HfSiN film from said Hf target in said atmosphere,
wherein said Si source has the formula SiH4-nRn wherein n is 0, 1, 2, 3 or 4 and R is an aliphatic moiety containing from 1 to about 18 carbon atoms and the mixture of Ar,
N2, and Si source has a flow rate from about 1-100/1-100/1-100 sccm, respectively;
forming a Si-containing conductive material atop said HfSiN film;
patterning said Si-containing conductive material, said HfSiN film and said stack into a patterned gate region; and
annealing said Si-containing conductive material, said HfSiN film and said stack utilizing a first anneal in nitrogen at 1000°
C., followed by a second anneal in a forming gas ambient at 450° C. to provide a gate stack structure in which the thickness
of the interfacial layer is reduced and said gate stack has an equivalent oxide thickness of about 12 angstroms.
|