| US 7,521,341 B2 | ||
| Method of direct deposition of polycrystalline silicon | ||
| Liang-Tang Wang, Tainan (Taiwan); Chi-Lin Chen, Hsinchu (Taiwan); I-Hsuan Peng, Hsinchu (Taiwan); Jung-Fang Chang, Tainan (Taiwan); and Chin-Jen Huang, Kaohsiung (Taiwan) | ||
| Assigned to Industrial Technology Research Institute, Hsinchu (Taiwan) | ||
| Filed on Nov. 09, 2005, as Appl. No. 11/270,862. | ||
| Prior Publication US 2007/0105373 A1, May 10, 2007 | ||
| Int. Cl. H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—488 [438/485; 257/E21.572] | 18 Claims |
| 1. A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber
in which a first electrode and a second electrode spaced apart from the first electrode are provided, the method comprising:
providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode;
applying a first power to the first electrode for generating a plasma in the chamber;
applying a first direct current (DC) voltage to one of the second electrode or the substrate during a nucleation stage of
the polysilicon film for ion bombarding the surface of the substrate; and
applying a second DC voltage to the second electrode during a growth stage of the polysilicon film after the nucleation stage.
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