| US 7,521,325 B2 | ||
| Semiconductor device and method for fabricating the same | ||
| Tsunehisa Sakoda, Kawasaki (Japan); Masaomi Yamaguchi, Kawasaki (Japan); Hiroshi Minakata, Kawasaki (Japan); Yoshihiro Sugita, Kawasaki (Japan); and Kazuto Ikeda, Kawasaki (Japan) | ||
| Assigned to Fujitsu Microelectronics Limited, Tokyo (Japan) | ||
| Filed on Jul. 28, 2005, as Appl. No. 11/190,911. | ||
| Claims priority of application No. 2005-092227 (JP), filed on Mar. 28, 2005. | ||
| Prior Publication US 2006/0214243 A1, Sep. 28, 2006 | ||
| Int. Cl. H01L 29/72 (2006.01) | ||
| U.S. Cl. 438—287 [438/197; 438/216; 438/261; 438/265; 438/769; 438/770; 438/786; 257/371; 257/410] | 12 Claims |
| 1. A method for fabricating a semiconductor device including a transistor formed on a semiconductor substrate, which comprises
the steps of:
forming a silicon nitride film on the semiconductor substrate;
forming a high dielectric gate insulation film of a high dielectric constant material on the silicon nitride film;
forming a gate electrode layer on the high dielectric gate insulation film;
patterning the silicon nitride film, the high dielectric gate insulation film and the gate electrode layer to form a gate
layer structure; and
forming a junction region in the semiconductor substrate with the gate layer structure as a mask, and
which further comprises the step of heating the semiconductor substrate in an oxidating ambient atmosphere after the step
of forming the gate electrode layer to change said silicon nitride film into a silicon oxide nitride film.
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