| US 7,521,324 B2 | ||
| Semiconductor device and method for manufacturing the same | ||
| Tadahiro Ohmi, 1-17-301, Komegafukuro, 2-chome Aoba-ku, Sendai-shi, Miyagi 980-0813 (Japan); Akinobu Teramoto, Sendai (Japan); Hidetoshi Wakamatsu, Sendai (Japan); and Yasuo Kobayashi, Nirasaki (Japan) | ||
| Assigned to Tadahiro Ohmi, Sendai-shi (Japan); and Tokyo Electron Limited, Tokyo (Japan) | ||
| Appl. No. 10/551,843 PCT Filed Mar. 31, 2004, PCT No. PCT/JP2004/004700 § 371(c)(1), (2), (4) Date Sep. 27, 2006, PCT Pub. No. WO2004/090991, PCT Pub. Date Oct. 21, 2004. |
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| Claims priority of application No. 2003-100170 (JP), filed on Apr. 03, 2003. | ||
| Prior Publication US 2007/0052042 A1, Mar. 08, 2007 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—287 [438/791] | 11 Claims |
| 1. A method for manufacturing a semiconductor device comprising the steps of:
forming a precursor film consisting essentially of a mixture of at least one metal and silicon,
forming a gate insulation film by performing a nitriding treatment on the precursor film, and
forming a gate electrode layer on the gate insulation film, wherein the gate insulation film is a high relative permittivity
(high-k) film;
wherein the gate insulation film is formed according to a plasma CVD technology.
|