| US 7,521,321 B2 | ||
| Method of fabricating a non-volatile semiconductor memory device | ||
| Yen-Hao Shih, Banqiao (Taiwan); Ming-Hsiang Hsueh, Hsinchu (Taiwan); Erh-Kun Lai, Longjing Shiang (Taiwan); Chia-Wei Wu, Jhubei (Taiwan); Chi-Pin Lu, Hsinchu (Taiwan); and Jung-Yu Hsieh, Hsinchu (Taiwan) | ||
| Assigned to MACRONIX International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Mar. 30, 2007, as Appl. No. 11/693,716. | ||
| Claims priority of provisional application 60/879224, filed on Jan. 08, 2007. | ||
| Prior Publication US 2008/0164513 A1, Jul. 10, 2008 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—264 [438/266] | 17 Claims |
| 1. A method of fabricating a memory device, comprising:
providing a substrate;
providing a tunnel dielectric film on the substrate;
providing a charge storage stack over the tunnel dielectric film, wherein the charge storage stack includes a storage medium
layer and a thin silicon layer overlaying the storage medium layer;
providing a second dielectric layer on the charge storage stack;
forming pairs of source and drain regions under the tunnel dielectric film; and
forming a number of storage blocks between each pair of source and drain regions by separating the charge storage stack using
a photoresistless etching process.
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