| US 7,521,310 B1 | ||
| Vertical thyristor in complementary SiGe bipolar process | ||
| Vladislav Vashchenko, Palo Alto, Calif. (US); Alexel Sadovnikov, Sunnyvale, Calif. (US); and Peter J. Hopper, San Jose, Calif. (US) | ||
| Assigned to National Semiconductor Corporation, Santa Clara, Calif. (US) | ||
| Filed on Oct. 29, 2005, as Appl. No. 11/261,235. | ||
| Int. Cl. H01L 21/8238 (2006.01) | ||
| U.S. Cl. 438—203 [438/336; 257/525; 257/E27.041; 257/E27.063] | 18 Claims |
| 1. A method of forming a thyrister device having a pnpn structure, comprising
forming at least part of a vertical SiGe base pnp transistor and at least part of a vertical SiGe base npn transistor on top
of one another as part of a complementary BJT process.
|