	US 7,521,309 B2
	Method of manufacturing semiconductor device
Akio Kaneko, Yokohama (Japan); Motoyuki Sato, Tsukuba (Japan); Katsuyuki Sekine, Yokohama (Japan); Tomohiro Saito, Yokohama (Japan); Kazuaki Nakajima, Tokyo (Japan); and Tomonori Aoyama, Yokohama (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Nov. 30, 2007, as Appl. No. 11/948,344.
Claims priority of application No. 2006-326091 (JP), filed on Dec. 01, 2006.
Prior Publication US 2008/0138969 A1, Jun. 12, 2008
Int. Cl. H01L 21/336 (2006.01)

U.S. Cl. 438—199

10 Claims

1. A method of manufacturing a semiconductor device having a MOSFET of a first conductivity type and a MOSFET of a second conductivity type different from the first conductivity type formed on a semiconductor substrate, the method comprising:

forming a gate insulating film composed of a high dielectric insulating film on said semiconductor substrate;

forming a first gate electrode layer containing at least one of Si and Ge on said gate insulating film in a gate electrode region, in which a gate electrode of said MOSFET of said first conductivity type is to be formed, and forming a second gate electrode layer having the same composition as said first gate electrode layer on said gate insulating film in a gate electrode region, in which a gate electrode of said MOSFET of said second conductivity type is to be formed;

forming a first metal containing layer on said first gate electrode layer and said second gate electrode layer;

forming a second metal containing layer for preventing diffusion of a metal on said first metal containing layer;

forming a protective film on said second metal containing layer;

selectively removing the protective film disposed above said second gate electrode layer of said MOSFET of said second conductivity type;

selectively removing said first metal containing layer and said second metal containing layer in the region from which said protective film is selectively removed using the remaining protective film as a mask;

forming a third metal containing layer on said second gate electrode layer from which said first metal containing layer and said second metal containing layer are selectively removed, the third metal containing layer having a thickness different from the thickness of said first metal containing layer in a case where the third metal containing layer contains the same metal or alloy as the metal or alloy contained in said first metal containing layer; and

performing a thermal processing, thereby causing reaction between the metal contained in said first metal containing layer and said first gate electrode layer to convert said first gate electrode layer into an alloy and causing reaction between the metal contained in said third metal containing layer and said second gate electrode layer to convert said second gate electrode layer into an alloy, thereby forming gate electrodes of different compositions.