| US 7,521,282 B2 | ||
| Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device | ||
| Tetsuya Yamamoto, Kochi (Japan); Atsutoshi Arakawa, Kitaibaraki (Japan); Kenji Sato, Takasaki (Japan); and Toshiaki Asahi, Saitama (Japan) | ||
| Assigned to Nippon Mining & Metals Co., Ltd., Tokyo (Japan) | ||
| Filed on Nov. 26, 2007, as Appl. No. 11/984,942. | ||
| Application 11/984942 is a division of application No. 10/472446, granted, now 7,358,159, previously published as PCT/JP02/02642, filed on Mar. 20, 2002. | ||
| Claims priority of application No. 2001-106295 (JP), filed on Apr. 04, 2001; application No. 2001-204419 (JP), filed on Jul. 05, 2001; application No. 2001-330193 (JP), filed on Oct. 29, 2001; and application No. 2001-330194 (JP), filed on Oct. 29, 2001. | ||
| Prior Publication US 2008/0090328 A1, Apr. 17, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—102 [438/478; 438/505; 438/508] | 9 Claims |
| 1. A method for producing a ZnTe system compound semiconductor single crystal, comprising:
co-doping a first dopant and a second dopant into the ZnTe system compound semiconductor single crystal, the first dopant
being for controlling a conductivity type of the ZnTe system compound semiconductor to n-type and comprising a Group 13 (3B)
element, and the second dopant comprising a Group 2 (2A) element having a bond energy with a Te element equivalent to or larger
than a bond energy between a Zn element and the Te element, when performing epitaxial growth of the ZnTe system compound semiconductor
single crystal on a substrate.
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