| US 7,521,274 B2 | ||
| Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material | ||
| Stephen D. Hersee, Albuquerque, N. Mex. (US); Xin Wang, Albuquerque, N. Mex. (US); and Xinyu Sun, Albuquerque, N. Mex. (US) | ||
| Assigned to STC.UNM, Albuquerque, N. Mex. (US) | ||
| Filed on Mar. 09, 2007, as Appl. No. 11/684,264. | ||
| Claims priority of provisional application 60/889363, filed on Feb. 12, 2007. | ||
| Claims priority of provisional application 60/808153, filed on May 25, 2006. | ||
| Claims priority of provisional application 60/798337, filed on May 08, 2006. | ||
| Claims priority of provisional application 60/780833, filed on Mar. 10, 2006. | ||
| Prior Publication US 2008/0036038 A1, Feb. 14, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—41 [438/479; 977/816] | 24 Claims |
| 1. A method of making nanowires comprising:
forming a selective growth mask over a substrate, wherein the selective growth mask comprises a plurality of patterned apertures
that expose a plurality of portions of the substrate;
using a selective non-pulsed growth mode to grow a semiconductor material on each of the plurality of portions of the substrate
exposed in each of the patterned apertures;
performing a growth-mode transition from the non-pulsed growth mode to a pulsed growth mode; and
forming a plurality of semiconductor nanowires by continuing the pulsed growth mode of the semiconductor material.
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