| US 7,520,957 B2 | ||
| Lid assembly for front end of line fabrication | ||
| Chien-Teh Kao, Sunnyvale, Calif. (US); Jing-Pei (Connie) Chou, Sunnyvale, Calif. (US); Chiukin (Steven) Lai, Sunnyvale, Calif. (US); Sal Umotoy, Antioch, Calif. (US); Joel M. Huston, San Jose, Calif. (US); Son Trinh, Cupertino, Calif. (US); Mei Chang, Saragoga, Calif. (US); Xiaoxiong (John) Yuan, Cupertino, Calif. (US); Yu Chang, San Jose, Calif. (US); Xinliang Lu, Sunnyvale, Calif. (US); Wei W. Wang, Cupertino, Calif. (US); and See-Eng Phan, San Jose, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on May 24, 2005, as Appl. No. 11/137,199. | ||
| Application 11/137199 is a division of application No. 11/063645, filed on Feb. 22, 2005. | ||
| Claims priority of provisional application 60/547839, filed on Feb. 26, 2004. | ||
| Prior Publication US 2005/0218507 A1, Oct. 06, 2005 | ||
| Int. Cl. H01L 21/00 (2006.01); C23C 16/00 (2006.01) | ||
| U.S. Cl. 156—345.43 [156/345.35; 156/345.45; 118/723 R; 118/723 DC; 118/723 E; 118/723 ER; 118/723 IR] | 8 Claims |
| 1. A lid assembly for semiconductor processing, comprising:
a first electrode comprising an expanding section that has a gradually increasing inner diameter;
a second electrode disposed opposite the first, wherein a plasma cavity is defined between the inner diameter of the expanding
section of the first electrode and a first surface of the second electrode and wherein the second electrode comprises a plurality
of gas passages that are in fluid communication with the plasma cavity; and
an isolation ring disposed about an outer diameter of the expanding section,
wherein the isolation ring and the expanding section of the first electrode fit within a recess formed in the first surface
of the second electrode.
|