| US 7,520,284 B2 | ||
| Apparatus for developing photoresist and method for operating the same | ||
| John M. Boyd, Hillsboro, Oreg. (US); Fritz C. Redeker, Fremont, Calif. (US); and David J. Hemker, San Jose, Calif. (US) | ||
| Assigned to Lam Research Corporation, Fremont, Calif. (US) | ||
| Filed on Aug. 15, 2005, as Appl. No. 11/204,907. | ||
| Application 11/204907 is a continuation in part of application No. 10/261839, filed on Sep. 30, 2002, granted, now 7,234,477. | ||
| Application 10/261839 is a continuation in part of application No. 09/608244, filed on Jun. 30, 2000, granted, now 6,488,040. | ||
| Prior Publication US 2006/0269877 A1, Nov. 30, 2006 | ||
| Int. Cl. B08B 3/00 (2006.01); G03F 7/00 (2006.01); F26B 5/12 (2006.01) | ||
| U.S. Cl. 134—57R [134/95.2; 134/102.3; 134/902; 34/407; 430/326; 430/314] | 9 Claims |

| 1. An apparatus for developing an exposed photoresist material on a substrate, comprising:
a first proximity head configured to define a developing meniscus of a photoresist developer solution on the substrate, the
developing meniscus to be defined between a bottom of the first proximity head and the substrate, and wherein the first proximity
head is configured to leave a film of the photoresist developer solution on the substrate following traversal of the first
proximity head and developing meniscus over the substrate;
a second proximity head configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the
substrate, the second proximity head positioned to follow the first proximity head relative to a traversal direction of the
first and second proximity heads over the substrate such that the film of photoresist developer solution is removed from the
substrate in conjunction with removal of the rinsing meniscus from the substrate; and
a proximity head positioning device defined to adjustably control a separation distance between the first proximity head and
the second proximity head so as to control a residence time for the film of photoresist developer solution on the substrate.
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