| US 7,519,940 B2 | ||
| Apparatus and method for compensating a lithography projection tool | ||
| Hsu-Ting Huang, San Jose, Calif. (US); and Abdurrahman Sezginer, Los Gatos, Calif. (US) | ||
| Assigned to Cadence Design Systems, Inc., San Jose, Calif. (US) | ||
| Filed on Aug. 13, 2005, as Appl. No. 11/203,329. | ||
| Claims priority of provisional application 60/677104, filed on May 02, 2005. | ||
| Prior Publication US 2006/0248497 A1, Nov. 02, 2006 | ||
| Int. Cl. G06P 17/50 (2006.01); G01M 11/00 (2006.01) | ||
| U.S. Cl. 716—21 [716/19; 356/124; 356/124.5] | 35 Claims |
| 1. A method of synthesizing a photomask pattern, comprising:
obtaining a phase and an amplitude of a transmittance function of an imaging system including a projection lens system;
forming a computational model of patterning that includes the phase and the amplitude of the transmittance function of the
imaging system;
synthesizing a mask pattern from a given target pattern by minimizing differences between the target pattern and another pattern
that the computational model predicts the synthesized mask pattern will form on a wafer;
and storing said synthesized mask pattern for later use in photomask construction;
wherein said computational model also includes at least one of the following effects: chromatic effects caused by wavelength
spreading of illumination; mask writing effects caused by mask synthesis; mask etch effects caused by mask synthesis; photoresist
blur on the wafer; photoresist development effects; and wafer etch effects.
|