| US 7,519,095 B2 | ||
| Vertical-cavity, surface-emission type laser diode and fabrication process thereof | ||
| Shunichi Sato, Miyagi (Japan); Takashi Takahashi, Miyagi (Japan); Naoto Jikutani, Kanagawa (Japan); Morimasa Kaminishi, Miyagi (Japan); and Akihiro Itoh, Miyagi (Japan) | ||
| Assigned to Ricoh Company, Ltd, Tokyo (Japan) | ||
| Filed on Jul. 13, 2007, as Appl. No. 11/827,818. | ||
| Application 10/677065 is a division of application No. 09/957507, filed on Sep. 20, 2001, granted, now 6,674,785. | ||
| Application 11/827818 is a continuation of application No. 11/338220, filed on Jan. 23, 2006, granted, now 7,260,137. | ||
| Application 11/338220 is a continuation of application No. 10/677065, filed on Oct. 01, 2003, granted, now 7,022,539. | ||
| Claims priority of application No. 2000-286477 (JP), filed on Sep. 21, 2000; application No. 2001-068588 (JP), filed on Mar. 12, 2001; and application No. 2001-214930 (JP), filed on Jul. 16, 2001. | ||
| Prior Publication US 2007/0263689 A1, Nov. 15, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01S 5/323 (2006.01) | ||
| U.S. Cl. 372—45.01 [372/46.01; 372/96; 372/98; 372/99] | 6 Claims |
| 1. A vertical-cavity, surface-emission-type laser diode comprising:
a semiconductor substrate; and
an optical cavity structure provided on or above said semiconductor substrate,
said optical cavity structure comprising an active region containing at least one active layer that produces a laser beam,
and upper and lower reflectors sandwiching said active region to form said optical cavity, said at least one active layer
containing nitrogen therein,
said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically,
said lower reflector reflecting an optical beam incident thereto by diffraction,
said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≤1) and a high-refractive-index layer of AlyGa1-yAs (0<x≤1), wherein GaxIn1-xPyAs1-y (0<x≤1, 0<y≤1) layer is provided between said active layer and said lower reflector including an interface between said lower
reflector and said active region.
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