US 7,518,926 B2
Systems and methods for improved programming of flash based devices
Chun-Hsiung Hung, Hsinchu (Taiwan); and Chuan-Ying Yu, Taichung (Taiwan)
Assigned to Macronix International Co., Ltd., (Taiwan)
Filed on Jul. 13, 2007, as Appl. No. 11/777,348.
Application 11/777348 is a continuation of application No. 11/188505, filed on Jul. 25, 2005, granted, now 7,257,029.
Prior Publication US 2007/0258290 A1, Nov. 08, 2007
Int. Cl. G11C 11/34 (2006.01)
U.S. Cl. 365—185.18  [365/185.05; 365/185.27] 8 Claims
OG exemplary drawing
 
1. A method for operating a memory cell having a source node, a drain node and a gate, comprising:
applying a gate voltage to the gate;
applying a constant current to the source node; and
applying a constant voltage to the source node.