| US 7,518,911 B2 | ||
| Method and system for programming multi-state non-volatile memory devices | ||
| Teruhiko Kamei, Kanagawa (Japan) | ||
| Assigned to SanDisk Corporation, Milpitas, Calif. (US) | ||
| Filed on May 25, 2006, as Appl. No. 11/440,511. | ||
| Prior Publication US 2007/0274128 A1, Nov. 29, 2007 | ||
| Int. Cl. G11C 16/04 (2006.01); G11C 16/10 (2006.01) | ||
| U.S. Cl. 365—185.03 [365/185.24; 365/230.04; 711/103] | 17 Claims |
| 1. A method for programming a non-volatile memory system having a pattern of multi-state memory cells, the memory system is
arranged as alternating even bit lines and odd bit lines of memory cells, wherein the pattern has a first set of memory cells
that are programmed to X states and a second set of memory cells that are programmed to Y states, X and Y are different integers,
the method comprising:
programming a first memory cell of the first set and a first word line, the first memory cell is associated with a first even
bit line, the first memory cell is programmed to one of the X states;
programming a second memory cell in the first word line and of the second set next, the second memory cell is programmed to
one of the Y states, the second memory cell is associated with a first odd bit line, the first odd bit line is adjacent to
the first even bit line;
programming a third memory cell of the first set and a second word line next, the second word line is a neighbor to the first
word line, the third memory cell is associated with the first odd bit line, the third memory cell is programmed to one of
the X states; and
programming a fourth memory cell of the second set and the second word line next, the fourth memory cell is associated with
the first even bit line, the fourth memory cell is programmed to one of the Y states.
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