| US 7,518,906 B2 | ||
| Magneto-resistive element | ||
| Sumio Ikegawa, Musashino (Japan); Masahiko Nakayama, Fuchu (Japan); Tadashi Kai, Tokyo (Japan); Eiji Kitagawa, Sagamihara (Japan); and Hiroaki Yoda, Sagamihara (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Mar. 20, 2006, as Appl. No. 11/378,351. | ||
| Claims priority of application No. 2005-285054 (JP), filed on Sep. 29, 2005. | ||
| Prior Publication US 2007/0070689 A1, Mar. 29, 2007 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 365/173] | 18 Claims |
| 1. A magneto-resistive element comprising:
a free layer whose magnetized state changes; and a pinned layer whose magnetized state is fixed,
the free layer comprising:
first and second ferromagnetic layers; and a non-magnetic layer which is arranged between the first and second ferromagnetic
layers,
wherein an intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve
in a direction of hard magnetization opens.
|