| US 7,518,252 B2 | ||
| Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device | ||
| Masato Hiramatsu, Yokohama (Japan); Yoshinobu Kimura, Yokohama (Japan); Hiroyuki Ogawa, Yokohama (Japan); Masayuki Jyumonji, Yokohama (Japan); and Masakiyo Matsumura, Yokohama (Japan) | ||
| Assigned to Advanced LCD Technologies Development Center Co., Ltd, Yokohama (Japan) | ||
| Filed on Aug. 25, 2006, as Appl. No. 11/509,605. | ||
| Application 11/509605 is a division of application No. 10/879165, filed on Jun. 30, 2004, granted, now 7,105,419. | ||
| Claims priority of application No. 2003-197824 (JP), filed on Jul. 16, 2003. | ||
| Prior Publication US 2006/0284175 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 23/28 (2006.01); H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—797 [257/75; 257/66; 257/347; 257/E21.134] | 5 Claims |
| 1. A thin-film semiconductor substrate comprising:
an insulative substrate;
a non-single crystal semiconductor film formed on said insulative substrate; and
a plurality of alignment marks, each of which is formed in said non-single crystal semiconductor film as a first portion that
is surrounded by a second portion and has an optical property distinguishable from the second portion, said non-single crystal
semiconductor film including crystallized and non-crystallized portions one of which serves as said first portion and the
other one of which serves as said second portion.
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