| US 7,518,212 B2 | ||
| Graded GexSe100-x concentration in PCRAM | ||
| John T. Moore, Boise, Id. (US); Terry L. Gilton, Boise, Id. (US); and Kristy A. Campbell, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Aug. 03, 2005, as Appl. No. 11/195,642. | ||
| Application 10/787121 is a division of application No. 10/230327, filed on Aug. 29, 2002, granted, now 6,856,002. | ||
| Application 11/195642 is a continuation of application No. 10/787121, filed on Feb. 27, 2004, granted, now 6,953,720. | ||
| Prior Publication US 2005/0266635 A1, Dec. 01, 2005 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 29/00 (2006.01) | ||
| U.S. Cl. 257—529 [257/55; 257/63; 257/296; 257/528; 257/536] | 25 Claims |
| 1. A memory device comprising:
an array of memory elements, at least one memory element comprising:
a first metal-containing chalcogenide glass layer, said first metal-containing chalcogenide glass layer having a first stoichiometry;
and
a second metal-containing chalcogenide glass layer formed over said first metal-containing chalcogenide glass layer, said
second metal-containing chalcogenide glass layer having a second stoichiometry different from said first stoichiometry.
|